JPH0521808Y2 - - Google Patents
Info
- Publication number
- JPH0521808Y2 JPH0521808Y2 JP14308988U JP14308988U JPH0521808Y2 JP H0521808 Y2 JPH0521808 Y2 JP H0521808Y2 JP 14308988 U JP14308988 U JP 14308988U JP 14308988 U JP14308988 U JP 14308988U JP H0521808 Y2 JPH0521808 Y2 JP H0521808Y2
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- pressure
- cantilever
- contact
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 27
- 239000011521 glass Substances 0.000 claims description 19
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Switches Operated By Changes In Physical Conditions (AREA)
- Contacts (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14308988U JPH0521808Y2 (en]) | 1988-10-31 | 1988-10-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14308988U JPH0521808Y2 (en]) | 1988-10-31 | 1988-10-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0262646U JPH0262646U (en]) | 1990-05-10 |
| JPH0521808Y2 true JPH0521808Y2 (en]) | 1993-06-04 |
Family
ID=31409597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14308988U Expired - Lifetime JPH0521808Y2 (en]) | 1988-10-31 | 1988-10-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0521808Y2 (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9246015B2 (en) | 2006-10-11 | 2016-01-26 | Macronix International Co., Ltd. | Vertical channel transistor structure and manufacturing method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5900580B2 (ja) * | 2014-11-12 | 2016-04-06 | 大日本印刷株式会社 | 力学量センサ及び力学量センサの製造方法 |
-
1988
- 1988-10-31 JP JP14308988U patent/JPH0521808Y2/ja not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9246015B2 (en) | 2006-10-11 | 2016-01-26 | Macronix International Co., Ltd. | Vertical channel transistor structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0262646U (en]) | 1990-05-10 |
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